The Investigation of Triple Diffusion Process for MOS-Controlled Thyristor MOS控制晶闸管的三重扩散工艺研究
The key fabricating process of MCT-the triple diffusion is investigated. 本文对MCT的核心工艺&三重扩散工艺进行了详细研究。
The isothermal section at 1000 ℃ of the Nb-Ti-Si system was constructed using a high-efficiency diffusion triple approach, supplemented with 11 alloys, the composition of which were selected in terms of the experimental results from the diffusion triple. 采用三元扩散偶结合11个关键合金测定了Nb-Ti&Si系1000℃等温截面。其中,关键合金的成分是依据扩散偶实验结果选定的。